TEM CHARACTERIZATION OF BUFFER LAYERS FOR EPITAXIAL YBA2CU3O7-DELTA GROWTH

Citation
I. Vavra et al., TEM CHARACTERIZATION OF BUFFER LAYERS FOR EPITAXIAL YBA2CU3O7-DELTA GROWTH, Physica status solidi. a, Applied research, 150(1), 1995, pp. 371-380
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
150
Issue
1
Year of publication
1995
Pages
371 - 380
Database
ISI
SICI code
0031-8965(1995)150:1<371:TCOBLF>2.0.ZU;2-N
Abstract
Epitaxial buffer layers of Zr(Y)O-2, SrTiO3, and Y2O3/Zr(Y)O-2 deposit ed on single crystalline Al2O3, MgO, and Si substrates, respectively, are analysed by plane view TEM applying a special ''planar section'' p reparation technique. In all buffer layers a mosaic structure is revea led with the relative orientation of the mosaic blocks within some deg rees. In the case of the Y2O3/Zr(Y)O-2 buffer layer the mosaic structu re is ''replicated'' into the subsequently deposited superconducting f ilm. By this means a unique microstructure of the YBa2Cu3O7-delta film is created consisting of twin-free mosaic blocks.