HIGH-QUALITY AG CRYSTAL-SURFACES FOR INVESTIGATING THE INITIAL-STAGESOF AG HOMOEPITAXY

Citation
C. Ammer et al., HIGH-QUALITY AG CRYSTAL-SURFACES FOR INVESTIGATING THE INITIAL-STAGESOF AG HOMOEPITAXY, Physica status solidi. a, Applied research, 150(1), 1995, pp. 507-519
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
150
Issue
1
Year of publication
1995
Pages
507 - 519
Database
ISI
SICI code
0031-8965(1995)150:1<507:HACFIT>2.0.ZU;2-F
Abstract
A method for preparing high quality surfaces of metal crystals is deve loped by combining electrolytical growth and polishing. The method, wh ich is particularly suited for ductile materials, is adopted to Ag cry stals. The surface perfection attained is demonstrated for Ag(111) sur faces, which were used in investigations of the homoepitaxial film gro wth of Ag/Ag(111) performed by means of electron microscopy and electr on diffraction. The formation of surface steps and stacking faults is characterized by their dependence on film thickness and temperature.