Z. Fan et al., SCALING OF HYSTERESIS IN THE ISING-MODEL AND CELL-DYNAMICAL SYSTEMS IN A LINEARLY VARYING EXTERNAL-FIELD, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 52(2), 1995, pp. 1399-1402
We present results from simulations of the hysteresis loops in the two
-dimensional (2D) Ising model and a cell-dynamical system (CDS) in a l
inearly, rather than sinusoidally, varying external field. We find in
the CDS a disorder-induced transition, which has behavior similar to t
he critical point in the 2D Ising model. Below the critical point, the
area of the hysteresis loops, representing the dissipation per cycle;
scales with the rate of the driving field H as A = A(o) + alpha H-alp
ha, with a nearly constant alpha similar to 0.36 +/- 0.08 for the Isin
g model and 0.66 +/- 0.02 for the CDS. Thus, the CDS belongs to the cl
ass of mean-field models, which is different from that of the Ising mo
del. Above the critical point, both the Ising model and the CDS give A
(o) = 0 and an a that increases with temperature and disorder.