THZ-FIELD INDUCED NONLINEAR TRANSPORT AND DC VOLTAGE GENERATION IN A SEMICONDUCTOR SUPERLATTICE DUE TO BLOCH OSCILLATIONS

Citation
Aa. Ignatov et al., THZ-FIELD INDUCED NONLINEAR TRANSPORT AND DC VOLTAGE GENERATION IN A SEMICONDUCTOR SUPERLATTICE DUE TO BLOCH OSCILLATIONS, Zeitschrift fur Physik. B, Condensed matter, 98(2), 1995, pp. 187-195
Citations number
35
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07223277
Volume
98
Issue
2
Year of publication
1995
Pages
187 - 195
Database
ISI
SICI code
0722-3277(1995)98:2<187:TINTAD>2.0.ZU;2-4
Abstract
We report on a theoretical analysis of terahertz (THz-) field induced nonlinear dynamics of electrons in a semiconductor superlattice that a re capable to perform Bloch oscillations. Our results suggest that for a strong THz-fieId a de voltage should be generated. We have g e anal yzed the real-time dynamics using a balance equation approach to descr ibe the electron transport in a superlattice miniband. Taking account of both Bloch oscillations of electrons in a superlattice miniband and dissipation, we studied the influence of a strong THz-field on curren tly available superlattices at room temperature. We found that a THz-f ield can lead to a negative conductance resulting in turn in a THz-fie ld induced de voltage, and that the voltage per superlattice period sh ould show, for varying amplitue of the THz-field, a form of twisted pl ateaus with the middle points being with high precision equal to the p hoton energy divided by the electron charge. We show that the THz-fiel d can cause fast switching from the zero-voltage to the finite voltage state, and that in the finite voltage state dynamic localization of t he electrons in a miniband occurs.