SCATTERING OF CONDUCTION ELECTRONS BY INTERFACE ROUGHNESS IN SEMICONDUCTOR HETEROSTRUCTURES

A fluctuation transport theory is applied to describe the mobility lim iting effect of interface roughness scattering in semiconductor hetero structures. As an example we consider a high mobility transistor and c ompare electron scattering by interface roughness with Coulomb scatter ing processes by ions and dipole fluctuations. We show that the dynami cal resistivity measurement provides detailed information about the au tocorrelation of the interface morphology.