A. Kaser et E. Gerlach, SCATTERING OF CONDUCTION ELECTRONS BY INTERFACE ROUGHNESS IN SEMICONDUCTOR HETEROSTRUCTURES, Zeitschrift fur Physik. B, Condensed matter, 98(2), 1995, pp. 207-213
A fluctuation transport theory is applied to describe the mobility lim
iting effect of interface roughness scattering in semiconductor hetero
structures. As an example we consider a high mobility transistor and c
ompare electron scattering by interface roughness with Coulomb scatter
ing processes by ions and dipole fluctuations. We show that the dynami
cal resistivity measurement provides detailed information about the au
tocorrelation of the interface morphology.