EXTENDED FINE-STRUCTURE IN ELASTICALLY SCATTERED ELECTRON-SPECTRA - APPLICATION TO A STUDY OF BI ON AN A-SI SURFACE

A new surface structure sensitive technique was used to study bismuth adsorption on an a-Si surface. The technique is based on the extended (oscillating) fine structure in the energy dependence of the elastic p eak intensity. It was found that the mean interatomic distance at the Bi/Si interface increased with Bi coverage. It is noteworthy that, in the submonolayer region, the mean interatomic distance increases linea rly with Bi coverage. We thus propose to treat the Bi/Si interface as a ''quasi-2D-solid solution''.