LOW-TEMPERATURE CLEAVAGE LUMINESCENCE OF SILICON

We find that the luminescence emitted when Si is cleaved at room tempe rature in vacuum has a temporal profile and duration that is very litt le changed when the cleavage is carried out at 80 K. This is in marked contrast to scattering or minority carrier lifetimes, or radiative re combination rates, which show large changes. The results are explained by inferring that the surface is temporarily but significantly heated by cleavage, which outweighs the effects of hulk temperature. The con sequences for surface theories are discussed.