LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY

Authors
MOUNIB A BALESTRA F MATHIEU N BRINI J GHIBAUDO G CHOVET A CHANTRE A NOUAILHAT A
Citation
A. Mounib et al., LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1647-1652
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
9
Year of publication
1995
Pages
1647 - 1652
Database
ISI
SICI code
0018-9383(1995)42:9<1647:LNSIPE>2.0.ZU;2-2
Abstract
The noise properties of polysilicon emitter bipolar transistors are st udied. The influences of the various chemical treatments and annealing temperatures, prior and after polysilicon deposition, on the noise ma gnitude are shown. The impact of hot-electron-induced degradation and post-stress recovery on the base and collector current fluctuations ar e also investigated in order to determine the main noise sources of th ese devices and to gain insight into the physical mechanisms involved in these processes.