SIMULATION OF EPITAXIAL SILICON CHEMICAL-VAPOR-DEPOSITION IN BARREL REACTORS

Authors
MASI M FOGLIANI S CARRA S
Citation
M. Masi et al., SIMULATION OF EPITAXIAL SILICON CHEMICAL-VAPOR-DEPOSITION IN BARREL REACTORS, Journal de physique. IV, 5(C5), 1995, pp. 261-268
Citations number
19
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Part
1
Pages
261 - 268
Database
ISI
SICI code
1155-4339(1995)5:C5<261:SOESCI>2.0.ZU;2-K
Abstract
the epitaxial silicon chemical vapor deposition by SiCl4/H-2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions (i.e., flow rates and reacto r pressure) have been examined. The simulation have been satisfactoril y compared with experimental growth rate data measured along the react or axial coordinate.