REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION

Authors
SIIMON H AARIK J
Citation
H. Siimon et J. Aarik, REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION, Journal de physique. IV, 5(C5), 1995, pp. 277-282
Citations number
12
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Part
1
Pages
277 - 282
Database
ISI
SICI code
1155-4339(1995)5:C5<277:ROTAHA>2.0.ZU;2-X
Abstract
Model calculations and time dependence of the deposit mass recorded by quartz crystal micro-balance during atomic layer growth of tantalum o xide are used to determine sticking coefficients of TaCl5 and II2O, an d diffusion coefficient of TaCl5 in N-2. It is shown that the reactivi ty of TaCl5 towards H2O-treated tantalum oxide surface is remarkable h igher than the reactivity of II2O towards TaCl5-treated tantalum oxide .