SYSTEMATIC CLASSIFICATION OF LPCVD PROCESSES

A simple classification scheme of low pressure chemical vapor depositi on processes is discussed which is based on only three different one-d imensional models of the radial film thickness distribution on silicon wafers processed in a conventional horizontal hot-wall reactor. compa ring theoretical predictions of these models with experimental results obtained from various LPCVD processes, a good qualitative agreement c an be stated. For better quantitative accuracy additional effects must be taken into account. The stoichiometrically induced radial flow for deposition reactions not preserving the mole number of involved gaseo us species is very important for the parameter evaluation as well as m odel identification.