REACTOR MODELING AND ANALYSIS OF AMORPHOUS HYDROGENATED SILICON DEPOSITION BY PECVD

The behaviour of plasma reactors is complex and affected by a large nu mber of parameters (temperature, pressure, flow rates, power,frequency , etc...). In that context, modeling constitutes a very convenient the oretical approach to analyze the complex parameters influences on the reactors overall performances, in the particular case studied here, am orphous hydrogenated silicon deposition rate profiles on the substrate s. This particular study is devoted to a detailed analysis of the reac tor behaviour in higher electrical power conditions. It demonstrates t hat, if relatively simple mechanisms for electron-molecule interaction s and gas phase reactions can be used in low power conditions, this do not remain true in higher power conditions where a great number of re actions must be taken into account.