NICKEL THIN-FILMS GROWN BY MOCVD USING NI(DMG)(2) AS PRECURSOR

The aim of this study was (i) to investigate alternatives to the very toxic Ni(CO)(4), (ii) optimization of the parameters for Ni film growt h, and (iii) characterization of the film morphology. The thermal beha viour of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg)(2)], b is(2,2,6,6-tetramethyl-3,5-heptandionato [Ni(thd)(2)], N,N'-ethylenebi s(2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2- en-4-onato)Ni(II), [Ni(apo)(2)] were investigated in a model reactor. Furthermore, the evaporation rates of these compounds were determined. Metallic nickel films were obtained using Ni(dmg)(2) as precursor. Th e deposition was carried out in a horizontal quartz reactor at reduced pressure in a hydrogen/helium atmosphere. The films were analysed by profilometry, X-ray diffraction, atomic force microscopy (AFM), four-p oint resistivity measurements and electron spectroscopy for chemical a nalysis (ESCA). Comparison of the AFM and ESCA data with the electrica l resistances resulted in a two layer film model.