By using tetrakis(diethylamido) zirconium [Zr(NEt(2))(4)]. excellent q
uality ZrO2 thin films were deposited with high growth rates on alumin
a and glass substrates by chemical vapor deposition. The depositions w
ere carried out in a hot wall reactor at reduced pressure (200 Pa) in
the temperature range 500-580 degrees C and in the presence of oxygen.
The as-grown films are colourless, smooth and well-adherent to the su
bstrates. SIMS analysis evidenced pure ZrO2 with a slight superficial
contamination of hydrocarbons and nitrogen. The films have a tapered p
olycrystalline columnar structure well visible in SEM micrographs. Fro
m X-ray diffraction analysis. the monoclinic phase resulted as the maj
or phase together with a small variable amount of tetragonal zirconia.
Under 550 degrees C the as-gown films resulted highly textured and me
re dominated by the (020) orientation. The films mere annealed in the
range 600-1000 degrees C and the effect of annealing on the texture an
d on the phase and dimensions of the crystallites have been studied.