CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET(2))(4) AS PRECURSOR

Citation
A. Bastianini et al., CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET(2))(4) AS PRECURSOR, Journal de physique. IV, 5(C5), 1995, pp. 525-531
Citations number
14
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Part
1
Pages
525 - 531
Database
ISI
SICI code
1155-4339(1995)5:C5<525:COZTUZ>2.0.ZU;2-M
Abstract
By using tetrakis(diethylamido) zirconium [Zr(NEt(2))(4)]. excellent q uality ZrO2 thin films were deposited with high growth rates on alumin a and glass substrates by chemical vapor deposition. The depositions w ere carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580 degrees C and in the presence of oxygen. The as-grown films are colourless, smooth and well-adherent to the su bstrates. SIMS analysis evidenced pure ZrO2 with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered p olycrystalline columnar structure well visible in SEM micrographs. Fro m X-ray diffraction analysis. the monoclinic phase resulted as the maj or phase together with a small variable amount of tetragonal zirconia. Under 550 degrees C the as-gown films resulted highly textured and me re dominated by the (020) orientation. The films mere annealed in the range 600-1000 degrees C and the effect of annealing on the texture an d on the phase and dimensions of the crystallites have been studied.