PROPERTIES OF THIN EPITAXIAL AEROSOL MOCVD CEO2 FILMS GROWN ON (1102)SAPPHIRE

We have examined the properties of thin epitaxial CeO2 films prepared by aerosol MOCVD. The films were deposited on (1 (1) over bar 02) sapp hire at deposition temperatures between 500 degrees C and 900 degrees C. The best properties were observed for the film grown at high deposi tion temperatures. The films have thickness similar to 0.2 mu m and th e full width at half maximum of the rocking curve 0.3 degrees - 0.4 de grees. The minimal yield measured by backscattering spectrometry in th e channeling mode was 5.5 %, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO2 films was rev ealed by the measurement of the phi-scan. The aerosol MOCVD CeO2 films Were found to be suitable as a buffer layer for a preparation of supe rconducting high-T-c films. YBa2Cu3O7 superconducting films deposited on the CeO2/(1 (1) over bar 02) sapphire exhibit superconducting trans ition temperature T-c(R=0) = 86 K.