IN-SITU IMAGING OF MU-N LOAD INDENTS INTO GAAS

Nanomechanical devices constitute an important and growing field, as t hey allow for new understanding of the mechanical properties at interf aces and surfaces. As an example, a newly developed nanoindentation de vice has been used to accomplish mu N load indents into GaAs. First, i t is shown that a plastic zone can be measured and is comparable to th eory. Also, it is shown that the rate of indentation affects both the depth and upset zone of low load indents, implying a strain-rate sensi tivity effect at room temperature. This is reinforced by observation o f what appears to be a glide-based relaxation process.