IN-SITU SINGLE-LIQUID-SOURCE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF (LA0.8CA0.2)MNO3 GIANT MAGNETORESISTIVE FILMS

A large magnetoresistance change (Delta R/R(H)) of -550% has been obse rved at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic che mical vapor deposition. M(thd)(n) (M = La, Ca, and Mn, and n = 2, 3) w ere dissolved together in an organic solution and used as precursors f or the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was condu cted at an oxygen partial pressure of 1.2 Torr and a substrate tempera ture ranging from 600 degrees C to 700 degrees C. The mechanism for th e large magnetoresistance change in this manganese oxide is briefly di scussed.