ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS

The current-voltage (I-V) characteristics and time-dependence photocon ductivity of the undoped and B-doped diamond films (DF's) before and a fter annealing were investigated. The boron and hydrogen concentration in diamond films were measured by means of nuclear reaction analysis (NRA) and the elastic-recoil detection (ERD) technique, respectively. The results show that induced boron atoms and hydrogen atoms affect th e electrical and photoconductive properties of diamond films. During t he annealing process, B concentration kept even, but H content decreas ed. For undoped diamond films, the escaping of H atoms has great effec ts on the electrical characteristics, but for B-doped samples, this ef fect decreases with the increase of B concentration.