2ND-HARMONIC GENERATION AND ATOMIC-FORCE MICROSCOPY STUDIES OF POROUSSILICON

Authors
AKTSIPETROV OA MELNIKOV AV MOISEEV YN MURZINA TV VANHASSELT CW RASING T RIKKEN G
Citation
Oa. Aktsipetrov et al., 2ND-HARMONIC GENERATION AND ATOMIC-FORCE MICROSCOPY STUDIES OF POROUSSILICON, Applied physics letters, 67(9), 1995, pp. 1191-1193
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
9
Year of publication
1995
Pages
1191 - 1193
Database
ISI
SICI code
0003-6951(1995)67:9<1191:2GAAMS>2.0.ZU;2-Q
Abstract
Structural properties of porous silicon were studied with atomic-force microscopy (AFM) and optical second harmonic generation (SHG). Depend ing on etching conditions, the SHG response was observed to be either anisotropic, showing C-2v symmetry, or isotropic. This correlated with AFM observations of quasi ordered structures in the first case. The S i etching process was studied by in situ SHG measurements. (C) 1995 Am erican Institute of Physics.