VARIATION OF THE THERMOVOLTAGE ACROSS A VACUUM TUNNELING BARRIER - COPPER ISLANDS ON AG(111)

Citation
A. Rettenberger et al., VARIATION OF THE THERMOVOLTAGE ACROSS A VACUUM TUNNELING BARRIER - COPPER ISLANDS ON AG(111), Applied physics letters, 67(9), 1995, pp. 1217-1219
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
9
Year of publication
1995
Pages
1217 - 1219
Database
ISI
SICI code
0003-6951(1995)67:9<1217:VOTTAA>2.0.ZU;2-H
Abstract
If there is a temperature difference between tip and sample of a scann ing tunneling microscope a thermovoltage is generated which is very se nsitive to the electronic states involved in the tunneling process. Th is has been used, e.g., to distinguish between different metals of a h eterogeneous metallic surface. To demonstrate the capability of this m ethod it has been applied to copper islands on a Ag(lll) surface. Know ing the thermopower for chemically homogeneous silver and copper surfa ces of -45 and -15 mu V/K, respectively, islands of copper on the silv er substrate can be well identified with a lateral resolution of 1 nm. (C) 1995 American Institute of Physics.