THE DEPENDENCE OF ULTRASHALLOW JUNCTION DEPTHS ON IMPACT DOSE-RATES

Authors
SULTAN A CRAIG M REDDY K BANERJEE S ISHIDA E MAILLOT P NEIL T LARSON L
Citation
A. Sultan et al., THE DEPENDENCE OF ULTRASHALLOW JUNCTION DEPTHS ON IMPACT DOSE-RATES, Applied physics letters, 67(9), 1995, pp. 1223-1225
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
9
Year of publication
1995
Pages
1223 - 1225
Database
ISI
SICI code
0003-6951(1995)67:9<1223:TDOUJD>2.0.ZU;2-0
Abstract
Ultrashallow junctions (similar to 60 nm) are obtained using low energ y BF2 (5 keV) implants in crystalline Si. The variation of junction de pth as a function of the dose rate is studied for doses of 1 x 10(14) and 1 X 10(15) cm(-2). Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decrease s as compared to the lower dose rates. The residual defect density aft er a 950 degrees C, 10 a anneal for a dose of 1 X 10(15) cm(-2) is red uced for the higher dose rate as compared to the lower dose rate. (C) 1995 American Institute of Physics.