MONTE-CARLO SIMULATION OF HOT-ELECTRON CHARGE-TRANSPORT IN DIAMOND UNDER AN INTERNAL ELECTRIC-FIELD

Citation
Zh. Huang et al., MONTE-CARLO SIMULATION OF HOT-ELECTRON CHARGE-TRANSPORT IN DIAMOND UNDER AN INTERNAL ELECTRIC-FIELD, Applied physics letters, 67(9), 1995, pp. 1235-1237
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
9
Year of publication
1995
Pages
1235 - 1237
Database
ISI
SICI code
0003-6951(1995)67:9<1235:MSOHCI>2.0.ZU;2-P
Abstract
Charge transport in diamond is studied using the Monte Carlo method, i n which the scattering of electrons by phonons is considered stochasti cally. It is assumed that electrons are injected into the diamond cond uction band with an initial equilibrium energy distribution and they a re then accelerated by the internal held subject to phonon scattering. It is found that the electron energy distribution is independent of t he field up to similar or equal to 0.1 V/mu m. For larger fields, ''ho t'' electron transport is predicted, i.e., the distribution shows a ta il which depends on the internal field and the thickness of the diamon d film. It implies that if electron field emission is from the conduct ion band in a diamond film, the transport and the energy spectrum of t he emitted electrons should exhibit hot electron features. (C) 1995 Am erican Institute of Physics.