NOVEL TECHNIQUE FOR P-TYPE DOPING OF ZNSE

Authors
ELEMAWY AA QIU Y OSINSKY A LITTLEFIELD E TEMKIN H
Citation
Aa. Elemawy et al., NOVEL TECHNIQUE FOR P-TYPE DOPING OF ZNSE, Applied physics letters, 67(9), 1995, pp. 1238-1240
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
9
Year of publication
1995
Pages
1238 - 1240
Database
ISI
SICI code
0003-6951(1995)67:9<1238:NTFPDO>2.0.ZU;2-L
Abstract
Thermally cracked nitric oxide (NO) has been used to grow heavily dope d p-type ZnSe layers. Net acceptor densities as high as similar to 4 X 10(18) cm(-3) were obtained, as determined by capacitance-voltage pro filing, in molecular beam epitaxial growth at 250 degrees C. Cracker e fficiency as a function of temperature and the nitric oxide flow rate is discussed and correlated with the doping level in the epitaxial lay er. (C) 1995 American Institute of Physics.