ELECTRON-BEAM-INDUCED CONDUCTIVITY MEASUREMENTS ON POROUS SILICON-BASED STRUCTURES

Electron beam induced conductivity measurement has been used for inves tigating the internal electrical field distribution in porous silicon based diode structures. Two carrier collection current peaks were foun d; one corresponding to the metal-silicon contact region, the second t o the interface between the porous and the single-crystalline parts of the structure. It is shown that the latter peak is caused by the buil t-in electrical field at the contact between silicon and the electroly te remaining in the pores. (C) 1995 American Institute of Physics.