ISLAND GROWTH, STRAIN, AND INTERDIFFUSION IN INAS1-XPX INP HETEROSTRUCTURES/

Using x-ray diffraction and transmission electron microscopy we have f ound that InAs1-xPx films deposited on InP(001) substrates with organo metallic vapor phase epitaxy grow in an unusual island growth mode cha racterized by large strain-dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate c omposition. These grow only until some point in the relaxation process , possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islan ds are found to penetrate deeply into the substrate. (C) 1995 American Institute of Physics.