TRANSIENT TEMPERATURE RESPONSE OF VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR-LASERS

Citation
Yg. Zhao et Jg. Mcinerney, TRANSIENT TEMPERATURE RESPONSE OF VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR-LASERS, IEEE journal of quantum electronics, 31(9), 1995, pp. 1668-1673
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
31
Issue
9
Year of publication
1995
Pages
1668 - 1673
Database
ISI
SICI code
0018-9197(1995)31:9<1668:TTROVS>2.0.ZU;2-C
Abstract
Transient temperature rises in vertical-cavity surface-emitting semico nductor lasers (VCSEL's) have been calculated using Green's function m ethods. The influence of current spreading, material parameters, and o perating conditions on the transient thermal response have been invest igated, The results show that current spreading plays an important rol e in the transient thermal properties of VCSEL's; under pulsed operati on the temperature profile in the active layer changes with time up to a delay of several microseconds. The calculated results are in good a greement with the measured data.