CONSIDERATION OF LOW-FREQUENCY NOISE IN MOSFETS FOR ANALOG PERFORMANCE

Low-frequency noise characteristics of MOSFET's have been studied in t erms of their dependence on metal interconnect perimeter length, devic e W/L ratio, and gate-biasing voltage, In contrast to the theoretical model, a noise intensity increasing with lowering gate biasing was obs erved, which suggests that a compromise between noise performance and gain/offset voltage needs to be carefully examined in analog circuit d esign, Low-frequency noise was also found to be dependent on W/L ratio in devices with the same gate area, which should be considered in fut ure device scaling.