A NEW VERTICAL IGBT STRUCTURE WITH A MONOLITHIC OVER-CURRENT, OVER-VOLTAGE, AND OVER-TEMPERATURE SENSING AND PROTECTING CIRCUIT

A new 600 V vertical Insulated Gate Bipolar Transistor (IGBT) structur e with monolithically integrated over-current, over-voltage, and over- temperature sensing and protecting functions has been developed to exp loit an extremely excellent tradeoff characteristic between an on-stat e voltage drop and a turn-off time for the first time. This device can be easily made by the conventional IGBT fabrication process, An accur ate and a realtime device temperature detection, as well as a high wit hstand capability against over-current and over-voltage conditions (sh ort circuit immunity of 30 mu sec, clamped collector voltage of 640 V) , have been achieved, Furthermore, an excellent trade-off characterist ic of 1.40 V as an on-state voltage drop and of 0.18 mu sec as a fall time is also obtained.