D. Park et al., A FULL-PROCESS DAMAGE DETECTION METHOD USING SMALL MOSFET AND PROTECTION DIODE, IEEE electron device letters, 17(12), 1996, pp. 563-565
Short constant voltage stress was applied to the gate of triple metal
process transistors to uncover otherwise undetectable process-induced
damage, 1 s at 9 MV/cm was enough to distinguish the damaged devices f
rom the undamaged ones clearly in the transistor characteristics. The
process damage was detected even after forming gas anneal and without
using large antenna test structures to gather the charges, Also, the s
mall diode provided a good leakage path to protect the gate from plasm
a process induced charging even in the reverse polarity, Diode-protect
ed devices can be used as references in this damage detection scheme.