CW OPERATION OF SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS AT 10 GHZ AND 15 GHZ/

We report on a 0.15-mu m gate length AlGaN/GaN doped channel heterostr ucture field effect transistor (DC-HFET) with maximum frequency of osc illation in excess of 97 GHz, HFET's based on our doped channel design exhibited CW microwave operation up to 15 GHz with a maximum output p ower of approximately 270 mW/mm at 10 GHz. These values are still limi ted by parasitics and can be significantly improved by optimizing the device design.