The plasma-assisted chemical vapor deposition technique was used to pr
oduce thin-film structures with both sinusoidally and stepwise varying
refractive-index profiles. The refractive index of the SiOxNy system
used in the fabrication was found to be time dependent following a ste
pwise change in reactant gas flows or initiation of the plasma. This t
ime dependence has been quantified using in situ ellipsometry and was
found to have components with exponential and linear dependences. The
time dependence of water vapor partial pressure in the system was iden
tified as the cause of the linear dependence. Allowance for the time-d
ependent effects has improved the agreement between the calculated spe
ctral response and the measured result for a broadband high-reflectanc
e mirror consisting of an arithmetic progression of discrete layers.