CURRENT TRANSPORT CHARACTERISTICS OF SIGEC SI HETEROJUNCTION DIODE/

The characteristics of heterojunction diodes fabricated from p-type ep itaxial Si0.07Ge0.91Co0.02 alloy grown by molecular beam epitaxy on n- type Si (100) have been examined by using current-voltage, capacitance -voltage, and Hall effect measurements, The SiGeC/Si heterojunction di ode shows good rectification with nearly ideal forward bias behavior a nd low reverse leakage currents compared to Ge/Si heterojunction diode s, The temperature dependence of the current-voltage behavior indicate s that the principle conduction mechanism is by electron injection ove r a barrier, Reverse breakdown occurs by the avalanche mechanism.