SIMULATION OF THIN-FILM GROWTH AND IN-SITU CHARACTERIZATION BY RHEED AND PHOTOEMISSION

Authors
ROUHANI MD FAZOUAN N GUE AM ESTEVE D
Citation
Md. Rouhani et al., SIMULATION OF THIN-FILM GROWTH AND IN-SITU CHARACTERIZATION BY RHEED AND PHOTOEMISSION, Vacuum, 46(8-10), 1995, pp. 931-934
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
46
Issue
8-10
Year of publication
1995
Pages
931 - 934
Database
ISI
SICI code
0042-207X(1995)46:8-10<931:SOTGAI>2.0.ZU;2-Z
Abstract
Simulations of epitaxial growth of GaAs associated with RHEED intensit y and photoemission current, as in situ characterization techniques, h ave been performed. The nature of incoming species which can be of ato mic or molecular form is taken into account. The simulations show in p hase RHEED and photoemission oscillations, in agreement with experimen tal results.