SIGE SI QUANTUM-WELLS WITH ABRUPT INTERFACES GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION/

Atmospheric pressure chemical vapor deposition has been used to grow S iGe/Si quantum well structures on (001) oriented Si substrates. SiCl2H 2 and GeH4 were used as reactive gases in a H-2 atmosphere. The hydrog en ambient is shown to greatly facilitate the deposition of quantum we lls with abrupt interfaces in the temperature range of 550-750 degrees C. The interface roughness is determined to be less than two monolaye rs, as shown by X-ray reflectivity, X-ray diffractometry data and the characteristics of resonant tunnel diodes showing a peak to valley rat io of 4.2. Photoluminescence spectra with resolved lines of no-phonon and phonon assisted recombination processes are observed.