LATERAL DISTRIBUTION OF SCHOTTKY-BARRIER HEIGHT - A THEORETICAL APPROACH

The effect of the metal, semiconductor and interface parameters on the Schottky barrier height is analysed in order to determine whether the lateral distribution of the barrier height obeys a normal or the logn ormal law. It is found that the fluctuations of some parameters result in a normal lateral distribution, while the fluctuations of the other s yield a lognormal lateral distribution of the Schottky barrier heigh t. It is shown that the only available experimental barrier height dis tribution may be explained by a superposition of two lognormal distrib utions.