LPCVD SILICON-CARBIDE AND SILICON CARBONITRIDE FILMS USING LIQUID SINGLE PRECURSORS

Authors
KLEPS I CACCAVALE F BRUSATIN G ANGELESCU A ARMELAO L
Citation
I. Kleps et al., LPCVD SILICON-CARBIDE AND SILICON CARBONITRIDE FILMS USING LIQUID SINGLE PRECURSORS, Vacuum, 46(8-10), 1995, pp. 979-981
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
46
Issue
8-10
Year of publication
1995
Pages
979 - 981
Database
ISI
SICI code
0042-207X(1995)46:8-10<979:LSASCF>2.0.ZU;2-0
Abstract
Silicon carbide (Si1-xCx) and silicon carbonitride (SICxNy) films were obtained by the low pressure chemical vapour deposition (LPCVD) metho d at moderate (750-900 degrees C) and high (T > 900 degrees C) tempera tures using liquid single organosilicon precursors such as hexamethyld isilane (hmds) and hexamethyldisilazane (HMDS). Structural and composi tional investigations of these films have been effected using various analytical techniques: Rutheford backscattering spectrometry (RBS), X- ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), etc.