CURRENT-VOLTAGE ANOMALIES ON POLYCRYSTALLINE GDSI2 P-SI SCHOTTKY JUNCTIONS DUE TO GRAIN-BOUNDARIES/

The current-voltage characteristics of epitaxial orthorhombic, texture d orthorhombic, polycrystalline orthorhombic, and polycrystalline hexa gonal GdSi2/(100)p-Si Schottky structures prepared by solid phase epit axy are compared. It is concluded that the anomalous I-V characteristi cs measured in the polycrystalline GdSi2/p-Si junctions, and the much higher values are scatters of the ideality factor and of the series re sistance obtained for the polycrystalline structures may be explained by the oxidation of the Gd remaining near the grain boundaries in the GdSi2 layer.