PHYSICAL CHARACTERIZATION OF IN2SE3 THIN-FILMS PREPARED BY ELECTRON-BEAM EVAPORATION

In2Se3 polycrystalline thin films have been prepared by electron beam evaporation method. The structural, electrical and optical properties have been investigated for as-deposited and thermally annealed films. Transmission electron microscopy analysis has been performed and the t hermal annealing effects on structure and morphology of the films have been determined. Hall mobility has been measured in the temperature r ange between 100 and 300 K and the results have been explained in term s of the grain boundary scattering mechanism. Finally, optical absorpt ion coefficient as a function of photon energy measurements have been performed to obtain the forbidden gap and to determine the nature of t he involved optical transitions.