STRUCTURAL STUDIES ON INP GAAS HETEROSTRUCTURES USING MULTIPLE X-RAY-DIFFRACTION/

InP epitaxial layers grown by gas-source molecular beam epitaxy on (10 0) GaAs substrates were characterized using three-beam multiple X-ray diffraction. The mosaic spread along the [0 $($) over bar$$ 11] and [0 1 $$($) over bar 1] directions and the in-plane epilayer lattice param eter are determined from computer simulations. The effects of nucleati on temperature, buffer layer type and post-growth annealing and substr ate misorientation are studied.