ELECTRON-SPECTROSCOPY AT DIAMOND (100)2X1-H WITH A SCANNING TUNNELINGMICROSCOPE

Citation
Hg. Busmann et al., ELECTRON-SPECTROSCOPY AT DIAMOND (100)2X1-H WITH A SCANNING TUNNELINGMICROSCOPE, Vacuum, 46(8-10), 1995, pp. 1097-1100
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
46
Issue
8-10
Year of publication
1995
Pages
1097 - 1100
Database
ISI
SICI code
0042-207X(1995)46:8-10<1097:EAD(WA>2.0.ZU;2-N
Abstract
Topographic scanning tunnelling microscopy on an undoped 2 x 1-reconst ructed diamond surface of a polycrystalline film was possible in air, but not in ultra-high vacuum. Elastic electron tunnelling spectroscopy with the scanning tunnelling microscope was when applied to study ele ctronic states at the surface. A surface bandgap was not found for the surface in air, whereas a gap approximately 3.5 eV wide was found in ultra-high vacuum. This gives strong evidence for the monohydrogenated form of the 2 x 1 reconstruction, (100)2 x 1:H. The Fermi level appea red within the gap about 0.5 eV below the upper band edge which thus e xplained the impossibility of topographic scanning tunnelling microsco py in ultra-high vacuum. Comparison with data for ultraviolet photoele ctron spectroscopy taken from the literature indicates that the surfac e states form one single, approximately 2-eV-wide band to filled state s located just above the valence band edge. The Fermi level is accordi ngly located approximately 0.5 eV below the conduction band edge and n ot pinned by surface states.