REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-CARBON - OPTICAL-EMISSION SPECTROSCOPY CHARACTERIZATION OF THE AFTERGLOW AND GROWTH-RATES

Citation
C. Tixier et al., REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-CARBON - OPTICAL-EMISSION SPECTROSCOPY CHARACTERIZATION OF THE AFTERGLOW AND GROWTH-RATES, Journal de physique. IV, 5(C5), 1995, pp. 593-600
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Part
2
Pages
593 - 600
Database
ISI
SICI code
1155-4339(1995)5:C5<593:RMPCOA>2.0.ZU;2-P
Abstract
Amorphous carbon films were obtained by remote microwave plasma enhanc ed chemical vapour deposition (RMPECVD). In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methan e is injected in the afterglow. The substrates are radio-frequency (RF ) biased in order to improve the film properties. Three configurations have been compared : microwave, RF, and mixed microwave-RF coupling. Optical emission spectroscopy allowed to compare intensities of a few spectral lines in the afterglow (CH, C-2, H, and Ar lines) as a functi on of process conditions. Films have been characterised by infra-red ( IR) spectroscopy and electron recoil detection analysis (ERDA). Stress in the films is in the range of -0.7 to -0.3 GPa (compressive). The i nfluence of the hydrogen presence in the plasma microwave power and ra dio-frequency bias voltage is discussed.