REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-CARBON - OPTICAL-EMISSION SPECTROSCOPY CHARACTERIZATION OF THE AFTERGLOW AND GROWTH-RATES
C. Tixier et al., REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-CARBON - OPTICAL-EMISSION SPECTROSCOPY CHARACTERIZATION OF THE AFTERGLOW AND GROWTH-RATES, Journal de physique. IV, 5(C5), 1995, pp. 593-600
Amorphous carbon films were obtained by remote microwave plasma enhanc
ed chemical vapour deposition (RMPECVD). In this process, a mixture of
argon and hydrogen is excited in the microwave discharge while methan
e is injected in the afterglow. The substrates are radio-frequency (RF
) biased in order to improve the film properties. Three configurations
have been compared : microwave, RF, and mixed microwave-RF coupling.
Optical emission spectroscopy allowed to compare intensities of a few
spectral lines in the afterglow (CH, C-2, H, and Ar lines) as a functi
on of process conditions. Films have been characterised by infra-red (
IR) spectroscopy and electron recoil detection analysis (ERDA). Stress
in the films is in the range of -0.7 to -0.3 GPa (compressive). The i
nfluence of the hydrogen presence in the plasma microwave power and ra
dio-frequency bias voltage is discussed.