Copper thin films have been deposited by thermal decomposition of copp
er acetylacetonate-oxygen mixtures. Copper films of high quality as ob
served by Auger Electron Spectroscopy (AES) have been obtained at temp
eratures as low as 300 degrees C. Under UV illumination, this temperat
ure threshold decreased down to 225 degrees C. The influence of substr
ate temperature and layer thickness on film roughness as observed by A
tomic Force Microscopy is discussed. The kinetics of Cu(acac)(2) decom
position has been investigated as a function of precursor partial pres
sure and substrate temperature in the range of 200-350 degrees C, and
the maximum deposition rate of 25 Angstrom/min has been reached in the
mass transport regime at a substrate temperature of 350 degrees C and
a precursor partial pressure of 0.04 Torr. The deposition rate could
be substancially enhanced by UV photoassistance.