OPTICAL-PROPERTIES OF CVD-DEPOSITED DIELECTRIC FILMS FOR MICROELECTRONIC DEVICES

Citation
A. Sassella et al., OPTICAL-PROPERTIES OF CVD-DEPOSITED DIELECTRIC FILMS FOR MICROELECTRONIC DEVICES, Journal de physique. IV, 5(C5), 1995, pp. 843-859
Citations number
41
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Part
2
Pages
843 - 859
Database
ISI
SICI code
1155-4339(1995)5:C5<843:OOCDFF>2.0.ZU;2-1
Abstract
Optical characterization of dielectric films used in integrated circui t device manufacturing can give information on their optical behavior as well as on their structural properties and composition. The results obtained on several undoped and doped silicon oxides, silicon oxynitr ides, and silicon nitrides usually employed for microelectronic applic ations both in the ultraviolet-visible and infrared spectral ranges ar e illustrated.