DEPOSITION OF THICK LAYERS, IN A NEW CVD REACTOR

Citation
H. Vergnes et al., DEPOSITION OF THICK LAYERS, IN A NEW CVD REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 997-1004
Citations number
6
Categorie Soggetti
Physics
Journal title
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Part
2
Pages
997 - 1004
Database
ISI
SICI code
1155-4339(1995)5:C5<997:DOTLIA>2.0.ZU;2-0
Abstract
This paper present a new kind of equipment called the annular reactor, which has been designed to treat a great number of substrates with a particularly good uniformity of thickness of deposits on the batch. Fu rthermore, a small scale pilot plant of this apparatus, called the sec tor reactor, has been built. It constitutes a very convenient laborato ry piece of equipment, particularly useful to perform, at low cost, th e unavoidable experimental part of the development of any new applicat ion. Theoretical and experimental results obtained with these reactors are presented and compared to those obtained when using tubular react ors. First tests in order to produce cheap thick layers are also repor ted.