POWDER DISSIPATION IN PECVD FOR SIH4-CH4-H-2 GAS-MIXTURES

The effective dissipated power in SiH4-CH4-H-2 plasmas excited by 13.5 6 MHz has been measured for different gas ratios using a subtractive t echnique to take into account the effects of power losses in the rf ci rcuit. It is found that the dissipated power in general increases with increasing CH4 concentration and decreases with increasing H-2 concen tration. Optical electrical and defective properties of films deposite d under a wide range of deposition conditions have been measured and c orrelated with dissipated power.