PHYSICAL-PROPERTIES OF GALLIUM INDIUM NITRIDE FILMS PREPARED BY PHOTO-ASSISTED MOVPE

The optical and electrical properties, crystallinity, and photolumines cence of GaInN epitaxial films were remarkably improved by photo-assit ed MOVPE using ultraviolet (UV) light from a deuterium (D-2) lamp. Til e dissociation of NH3 is promoted by irradiation with a D-2 lamp aid i ndium atoms are effectively incorporated into the crystal lattice of G aInN. Good-quality epitaxial GaInN films were obtained at higher growt h temperature of 800 degrees C increasing the flow rate of trimethylin dium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800 degrees C is 14 times as great as that of 675 degrees C.