A GAAS SINGLE VOLTAGE-CONTROLLED RF SWITCH IC

A new GaAs monolithic switch IC that can be operated with a single pos itive control voltage is developed. The implemented IC is provided two different biasing configurations with the switching FETs. Each FET ca n be biased independently by large capacitors fabricated employing the BST (Barium Strontium Titanate) technology. The fabricated SPDT (Sing le-Pole-Double-Throw) switch IC shows insertion loss less than 1.0 dB and isolation over 25 dB in the frequency range of 0.1 GHz to 1.9 GHz with a single control voltage of 3 V.