HEAVY-FERMION SEMICONDUCTOR BEHAVIOR OF THE SU(N-D) ANDERSON LATTICE MODEL

The heavy-fermion semiconductor behavior of the SU(N-d) Anderson latti ce model is examined by using the slave-boson technique within the fra mework of mean-field theory. The results show that the slave-boson mea n-field theory of this model can present a heavy Fermi liquid or a hea vy-fermion semiconductor ground state for different n values (n is the total number of the conduction and the on-site f electrons per lattic e site), thus providing a unified description of the heavy Fermi liqui d and the heavy-fermion semiconductor. The basic features of this theo ry are in qualitative agreement with the experimentally observed heavy -fermion semiconductor behavior of some rare-earth compounds.