INITIAL-STAGE OF AG GROWTH ON SI(001) STUDIED BY HIGH-RESOLUTION RUTHERFORD-BACKSCATTERING SPECTROSCOPY

Citation
K. Kimura et al., INITIAL-STAGE OF AG GROWTH ON SI(001) STUDIED BY HIGH-RESOLUTION RUTHERFORD-BACKSCATTERING SPECTROSCOPY, Physical review. B, Condensed matter, 52(8), 1995, pp. 5737-5742
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
8
Year of publication
1995
Pages
5737 - 5742
Database
ISI
SICI code
0163-1829(1995)52:8<5737:IOAGOS>2.0.ZU;2-L
Abstract
The initial stage of Ag growth on the Si(001)2X1 surface is observed a t 520 and 760 K by monolayer-resolvable high-resolution Rutherford-bac kscattering spectroscopy. At 760 K, the coverage of Ag saturates at 0. 5 ML. (1 ML =6.78X10(14) atoms/cm(2)) after formation of a two-dimensi onal Ag layer. The position of the Ag atom is determined from observed inelastic energy losses of He ions scattered from the Ag atoms. The g rowth mode at 520 K is found to be the Stranski-Krastanov mode with a critical thickness of 0.5 ML for the initial layer growth.