A GAAS HIGH-POWER RF SINGLE POLE DUAL THROW SWITCH IC FOR DIGITAL MOBILE COMMUNICATION-SYSTEM

A high power GaAs monolithic RF switch IC that can handle the power ov er 5 W (P1 dB: 37 dBm) with a positive 5-V control voltage was develop ed. This high power handling capability was achieved by using a novel circuit configuration that makes possible the feeding forward of the i nput-signal to the control gates. The implemented Single Pole Dual Thr ow switch IC integrated with the coupling capacitors using high dielec tric material, Barium Strontium Titanate, shows the insertion loss les s than 0.8 dB at 1 GHz and the isolation over 25 dB at a frequency ran ge of 0.5-1.5 GHz.